Infrared - Detectors
and IR detector modules for the spectral range 2-16 µm
Infrared - Detectors in TO or BNC Housing
Infrared - Detector with 4-stage TE-Cooling
PEM - Detector, time constant approx. 0.2 ns
Explanation of the VIGO Infrared Detector Programme
According to the Materials used, the detectors are divided into two groups
- HgCdTe detectors (often referred to in German as MCT detectors)
- InAs and InAsSb detectors
According to the classification of the semiconductor elements in the periodic table, one also speaks of detectors made of II-VI semiconductors (Hg, Cd, Te) and III-V semiconductors (In, As, Sb).
According to the functional principle, IR detectors are basically divided into three groups
- PV – Photovoltaic
- PEM – Photoelectromagnetic
- PC – Photo resistor (PC = photo conductor)
The infrared detectors are divided into two groups with regard to the type of cooling, the uncooled detectors and the detectors with a 2, 3 or 4-stage TE cooling (corresponding to the coding “2TE”, “3TE” or “4TE” in the detector designation).
In addition, the letters “M” and “I” are used in the detector designations.
- M for multiple junction : A large number of serial p-n junctions increases the sensitivity of the detectors and enables larger detector areas for long-wave detectors in particular.
- I for optical immersion : Optical immersion reduces the electrical area in relation to the optical area, thus significantly improving the noise behaviour of the detector.
Window selection
Uncooled detectors are delivered without a window as standard.
However, it is recommended to install a window in rough, dusty environments.
TE cooled detectors absolutely need a window to protect the detector from ice formation.
All windows have a 3° wedge to suppress interference.
ZnSe is AR coated, for sapphire it is an option. BaF2 windows remain without AR.
Uncooled IR detectors
Photovoltaic infrared detectors made of InAs / InAsSb
- Serie PVA (2 – 5,5 µm)
- Serie PVIA (2 – 5,5 µm)
Photoelectromagnetic infrared detectors made of HgCdTe
- Serie PEM (2 – 12 µm)
- Serie PEMI (2 – 12 µm)
TE cooled IR Detectors
Photovoltaic infrared detectors made of HgCdTe
- Serie PV-2TE (2 – 12 µm)
- Serie PV-3TE (2 – 12 µm)
- Serie PV-4TE (2 – 12 µm)
- Serie PVI-2TE (2 – 12 µm)
- Serie PVI-3TE (2 – 12 µm)
- Serie PVI-4TE (2 – 12 µm)
- Serie PVM-2TE (2 – 11 µm)
- Serie PVMI-2TE (2 – 13 µm)
- Serie PVMI-3TE (2 – 13 µm)
- Serie PVMI-4TE (2 – 13 µm)
Photovoltaic infrared detectors made of InAs / InAsSb
- Serie PVA-2TE (2 – 5,5 µm)
- Serie PVIA-2TE (2 – 5,5 µm)
Photoconductive Infrared Detectors made of HgCdTe
- Serie PC-2TE (1 – 14 µm)
- Serie PC-3TE (1 – 15 µm)
- Serie PC-4TE (1 – 16 µm)
- Serie PCI-2TE (1 – 15 µm)
- Serie PCI-3TE (1 – 15 µm)
- Serie PCI-4TE (1 – 16 µm)
IR Quadrant Detectors and Arrays
Quadrant Detector and Arrays
Complete Quadrant and Array Modules
Selected Line = Configured IR detector modules (available from stock)
Compact uncooled IR detector modules
- TO8 all-in-one module AM03120 for 2.5-5.5 µm, DC-2.5 MHz
- Micro-M-10.6 Modul for 2-12 µm, DC-10 MHz
TE cooled flexible lab modules with programmable preamplifier
- Lab-Modul LabM-I-4 for 2,4-4,3 µm, >5 MHz
- Lab-Modul LabM-I-5 for 2,9-5,5 µm, >15 MHz
- Lab-Modul LabM-I-6-01 for 2,5-7,0 µm, >3 MHz
- Lab-Modul LabM-I-10,6 for 2-12 µm, DC – 100 MHz
Universal modules with preamplifier and integrated TE cooling control
- Modul SM-I-12 for 2-14 µm, 10 Hz – 1 MHz
- Modul UM-I-10,6 for 2-12 µm, DC – 100 MHz
- Ultra High Speed Modul UHSM for 3-12 µm, > 1 GHz
- Ultra High Speed Modul UHSM-I for 3-12 µm, > 700 MHz
